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RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v

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RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v

Place of Origin : ShenZhen China

Brand Name : OTOMO

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D882

Collector-Base VoltageCollector-Base Voltage : 40v

Collector-Emitter Voltage : 30v

Emitter-Base Voltage : 6V

Power mosfet transistor : TO-126 Plastic-Encapsulate

Material : Silicon

Type : Triode Transistor

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TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

FEATURE


Power Dissipation

MARKING

D882=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
D882 TO-126 Bulk 200pcs/Bag
D882-TU TO-126 Tube 60pcs/Tube

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃




ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA
DC current gain hFE VCE= 2 V, IC= 1A 60 400
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V

Transition frequency

fT

VCE= 5V, IC=0.1A

f =10MHz

90

MHz


CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400


Typical Characteristics


RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30vRoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30vRoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30vRoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126



RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v


Product Tags:

RoHS Tip Power Transistors

      

30v Tip Power Transistors

      

30v NPN Power Transistor

      
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